US 12,446,259 B2
Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
Ryo Hayashi, Yokohama (JP); Masafumi Sano, Yokohama (JP); Katsumi Abe, Kawasaki (JP); Hideya Kumomi, Tokyo (JP); and Kojiro Nishi, Yokohama (JP)
Assigned to CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Jun. 1, 2023, as Appl. No. 18/327,289.
Application 16/566,090 is a division of application No. 14/676,693, filed on Apr. 1, 2015, abandoned.
Application 14/676,693 is a division of application No. 11/583,022, filed on Oct. 19, 2006, abandoned.
Application 18/327,289 is a continuation of application No. 17/218,830, filed on Mar. 31, 2021, granted, now 11,705,523.
Application 17/218,830 is a continuation of application No. 16/566,090, filed on Sep. 10, 2019, abandoned.
Claims priority of application No. 2005-305950 (JP), filed on Oct. 20, 2005.
Prior Publication US 2023/0307546 A1, Sep. 28, 2023
Int. Cl. H10D 30/67 (2025.01); G02F 1/1368 (2006.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/123 (2023.01); H10K 59/126 (2023.01); H10K 102/00 (2023.01)
CPC H10D 30/6723 (2025.01) [G02F 1/1368 (2013.01); H10D 30/6755 (2025.01); H10D 30/6756 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01); H10K 59/123 (2023.02); H10K 59/126 (2023.02); H10K 2102/311 (2023.02)] 30 Claims
OG exemplary drawing
 
1. A display comprising:
a substrate having a surface along a first direction;
a field-effect transistor on the substrate, the field-effect transistor comprising an active layer which is a semiconductor layer, a gate electrode, a gate-insulating film between the active layer and the gate electrode in a second direction perpendicular to the first direction, a first electrode, and a second electrode;
an interlayer-insulating film covering the field-effect transistor;
a light-shielding film arranged between the interlayer-insulating film and the substrate; and
a light-emitting device on the substrate, the light-emitting device comprising a third electrode, a fourth electrode between the third electrode and the interlayer-insulating film, and a light-emitting layer between the third electrode and the fourth electrode,
wherein
the substrate is a light-shielding substrate or a silicon substrate,
the first electrode is arranged to overlap a first portion of the active layer in the second direction and is electrically conducted to the active layer,
the second electrode is arranged to overlap a second portion of the active layer in the second direction and is electrically conducted to the active layer,
the first electrode and the second electrode are arranged between the active layer and the interlayer-insulating film in the second direction,
the light-shielding film is arranged to overlap the active layer, the first electrode, and the second electrode in the second direction,
the second electrode is arranged between the light-shielding film and the active layer in the second direction,
the second electrode is connected to the fourth electrode,
the light-emitting device is an electroluminescence device having a top emission structure, and
the light-shielding film is provided independent of the gate electrode.