US 12,446,258 B2
Thin film semiconductor switching device
Douglas W. Barlage, Edmonton (CA); Lhing Gem Shoute, Edmonton (CA); Kenneth C. Cadien, Edmonton (CA); Alex Munnlick Ma, Edmonton (CA); and Eric Wilson Milburn, Edmonton (CA)
Assigned to ZINITE CORPORATION, Edmonton (CA)
Filed by ZINITE CORPORATION, Edmonton (CA)
Filed on Feb. 21, 2025, as Appl. No. 19/060,198.
Application 19/060,198 is a continuation of application No. 18/576,205, previously published as PCT/IB2022/056349, filed on Jul. 8, 2022.
Claims priority of provisional application 63/221,292, filed on Jul. 13, 2021.
Prior Publication US 2025/0234589 A1, Jul. 17, 2025
Int. Cl. H10D 30/67 (2025.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/552 (2006.01); H01L 25/065 (2023.01); H01L 25/16 (2023.01); H10D 89/60 (2025.01); H10D 99/00 (2025.01)
CPC H10D 30/6713 (2025.01) [H01L 23/481 (2013.01); H01L 23/5286 (2013.01); H01L 23/552 (2013.01); H01L 25/0657 (2013.01); H01L 25/16 (2013.01); H10D 30/6728 (2025.01); H10D 30/6755 (2025.01); H10D 30/6758 (2025.01); H10D 89/60 (2025.01); H10D 99/00 (2025.01); H01L 2225/06541 (2013.01)] 30 Claims
OG exemplary drawing
 
1. A thin-film transistor comprising:
a source disposed at a substrate or insulation layer, the source including a source contact;
a drain disposed at the substrate or insulation layer and spaced apart from the source;
an n-type semiconductor layer extending between the source and drain for formation of a carrier channel between the source and drain, the n-type semiconductor layer including tin oxide; and
a source-channel interfacial member positioned between the source contact and the n-type semiconductor layer, the source-channel interfacial member being in contact with the source contact and the n-type semiconductor layer;
wherein the source-channel interfacial member is operable to deplete the carrier channel in a region of the n-type semiconductor layer adjacent the source contact to reduce leakage current when the thin-film transistor is off.