US 12,446,257 B2
Method for forming transistor devices having source region segments and body region segments
Takashi Ogura, Oizumi-machi (JP); Takashi Hiroshima, Ota (JP); Toshimitsu Taniguchi, Aizuwakamatsu (JP); and Peter A. Burke, Portland, OR (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed on May 24, 2024, as Appl. No. 18/674,507.
Application 18/674,507 is a division of application No. 18/182,186, filed on Mar. 10, 2023, granted, now 11,996,477.
Application 18/182,186 is a continuation of application No. 17/452,095, filed on Oct. 25, 2021, granted, now 11,605,734, issued on Mar. 14, 2023.
Application 17/452,095 is a continuation of application No. 16/512,854, filed on Jul. 16, 2019, granted, now 11,158,734, issued on Oct. 26, 2021.
Claims priority of provisional application 62/826,736, filed on Mar. 29, 2019.
Prior Publication US 2024/0313112 A1, Sep. 19, 2024
Int. Cl. H10D 30/66 (2025.01); H10D 64/23 (2025.01); H10D 84/00 (2025.01)
CPC H10D 30/668 (2025.01) [H10D 30/663 (2025.01); H10D 64/252 (2025.01); H10D 84/141 (2025.01)] 25 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first trench and a second trench in a semiconductor region such that a mesa region is defined between the first trench and the second trench, the mesa region having a length aligned along a longitudinal axis orthogonal to a vertical axis aligned along a height of the mesa region;
forming a dielectric layer along a sidewall of each of the first trench and the second trench;
forming an electrode in each of the first trench and the second trench;
forming a plurality of source region segments of a first conductivity type in at least a portion of a side of the mesa region; and
forming a plurality of body region segments of a second conductivity type in the at least the side of the mesa region, the plurality of body region segments defining an alternating pattern with the plurality of source region segments along the side of the mesa region, the alternating pattern being aligned along the longitudinal axis.