US 12,446,249 B2
Polarization-engineered heterogeneous semiconductor heterostructures
Karl D. Hobart, Alexandria, VA (US); Marko J. Tadjer, Vienna, VA (US); Michael A. Mastro, Fairfax, VA (US); Mark Goorsky, Valencia, CA (US); Asif Khan, Columbia, SC (US); and Samuel Graham, Jr., Lithonia, GA (US)
Assigned to The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed by The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed on Apr. 28, 2022, as Appl. No. 17/731,289.
Prior Publication US 2023/0352571 A1, Nov. 2, 2023
Int. Cl. H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/4732 (2025.01) [H10D 30/015 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] 23 Claims
OG exemplary drawing
 
1. A semiconductor device including engineered polarities comprising:
a first polar semiconductor crystal; and
a second polar semiconductor crystal having a bonding surface bonded to a bonding surface of the first polar semiconductor crystal via a direct bonding process, thereby providing an interface;
wherein the interface generates a spontaneous polarization-induced charge, resulting in a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG) at the interface; and
wherein the bonding surface of the first polar semiconductor crystal and the bonding surface of the second polar semiconductor crystal are chemically activated bonding surfaces, resulting in room temperature covalent bonding between the first polar semiconductor crystal and the second polar semiconductor crystal.