US 12,446,248 B2
Two-dimensional semiconductor transistor with reduced hysteresis and method of manufacturing the same
Hyun Yong Yu, Seoul (KR); and Kyu Hyun Han, Seoul (KR)
Assigned to Korea University Research and Business Foundation, Seoul (KR)
Appl. No. 17/786,655
Filed by KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, Seoul (KR)
PCT Filed Jun. 17, 2020, PCT No. PCT/KR2020/007864
§ 371(c)(1), (2) Date Jun. 17, 2022,
PCT Pub. No. WO2021/206219, PCT Pub. Date Oct. 14, 2021.
Claims priority of application No. 10-2020-0041544 (KR), filed on Apr. 6, 2020.
Prior Publication US 2023/0013710 A1, Jan. 19, 2023
Int. Cl. H10D 30/47 (2025.01); H01L 21/02 (2006.01); H01L 21/445 (2006.01); H01L 21/78 (2006.01); H10D 30/67 (2025.01); H10D 48/36 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01); H10K 10/40 (2023.01)
CPC H10D 30/47 (2025.01) [H01L 21/02568 (2013.01); H01L 21/445 (2013.01); H01L 21/7806 (2013.01); H10D 30/6739 (2025.01); H10D 48/362 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01); H10K 10/40 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A two-dimensional semiconductor transistor comprising:
a gate electrode;
a gate insulating layer disposed on the gate electrode;
an organic dopant layer disposed on the gate insulating layer and comprising an organic material comprising electrons;
a two-dimensional semiconductor layer disposed on the organic dopant layer;
a source electrode disposed on the two-dimensional semiconductor layer; and
a drain electrode disposed on the two-dimensional semiconductor layer and spaced apart from the source electrode,
wherein the organic dopant layer:
comprises at least one of triphosphine, diphenylphosphide, and chlorodiphenylphosphine;
is obtained by naturally oxidizing at least one of the triphosphine, the diphenylphosphide, and the chlorodiphenylphosphine; or
comprises at least one of nicotinamide adenine dinucleotide, p-toluenesulfonic acid, dimethyl-4-phenylenediamine, tetracyanoethylene (TCNE), and trifluoroacetic acid (TFA).