| CPC H10D 30/43 (2025.01) [H10D 30/014 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01)] | 22 Claims |

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1. A field-effect transistor (FET) device comprising:
a substrate, a source body, a drain body and a set of vertically spaced apart channel layers extending between the source body and the drain body in a first direction along the substrate,
the source body comprising a common source body portion arranged at a first lateral side of the set of channel layers and a set of vertically spaced apart source prongs protruding from the common source body portion in a second direction along the substrate, transverse to the first direction,
the drain body comprising a common drain body portion arranged at the first lateral side of the set of channel layers and a set of drain prongs protruding from the common drain body portion in the second direction; and
a gate body comprising a common gate body portion arranged at a second lateral side of the set of channel layers, opposite the first lateral side, and a set of gate prongs protruding from the common gate body gate portion in a third direction along the substrate, opposite the first direction;
wherein each channel layer comprises a first side and an opposite second side, the first side arranged in abutment with a topside or an underside of a pair of source and drain prongs and the second side facing a gate prong.
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