US 12,446,239 B2
Capacitor, method of fabricating the capacitor, and electronic device including the capacitor
Changsoo Lee, Seoul (KR); Sangwoon Lee, Suwon-si (KR); Yongsung Kim, Suwon-si (KR); Jinhong Kim, Seoul (KR); Hyungjun Kim, Suwon-si (KR); and Jooho Lee, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR); and Ajou, University Industry-Academic Cooperation Foundation, Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Suwon-si (KR)
Filed on Jul. 11, 2022, as Appl. No. 17/861,577.
Claims priority of application No. 10-2021-0153444 (KR), filed on Nov. 9, 2021.
Prior Publication US 2023/0143124 A1, May 11, 2023
Int. Cl. H10D 1/68 (2025.01); H01G 4/008 (2006.01); H01G 4/10 (2006.01); H01G 4/12 (2006.01); H10B 12/00 (2023.01)
CPC H10D 1/682 (2025.01) [H01G 4/008 (2013.01); H01G 4/10 (2013.01); H01G 4/1227 (2013.01); H10B 12/033 (2023.02); H10D 1/692 (2025.01); H10D 1/696 (2025.01); H01G 4/12 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A capacitor comprising:
a lower electrode comprising a perovskite material;
an upper electrode spaced apart from the lower electrode;
a dielectric layer between the lower electrode and the upper electrode and comprising a perovskite material; and
a passivation layer between the lower electrode and the dielectric layer and comprising SrxTiyO3 in which a content of Ti is greater than a content of Sr.