US 12,446,238 B2
Semiconductor device and method of forming the same
Yu-Hsing Chang, Taipei (TW); Chern-Yow Hsu, Hsin-Chu County (TW); and Shih-Chang Liu, Kaohsiung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Mar. 26, 2024, as Appl. No. 18/616,221.
Application 18/616,221 is a division of application No. 18/164,642, filed on Feb. 6, 2023, granted, now 11,973,149.
Application 17/014,607 is a division of application No. 16/136,896, filed on Sep. 20, 2018, granted, now 10,804,411, issued on Oct. 13, 2020.
Application 18/164,642 is a continuation of application No. 17/014,607, filed on Sep. 8, 2020, granted, now 11,575,052, issued on Feb. 7, 2023.
Claims priority of provisional application 62/592,288, filed on Nov. 29, 2017.
Prior Publication US 2024/0234592 A1, Jul. 11, 2024
Int. Cl. H10D 1/66 (2025.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01)
CPC H10D 1/66 (2025.01) [H01L 21/0271 (2013.01); H01L 21/76877 (2013.01); H01L 23/5223 (2013.01); H10D 1/042 (2025.01); H10D 1/68 (2025.01); H10D 1/714 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first conductive plate and a second conductive plate disposed adjacent to the first conductive plate;
a first insulating plate disposed over the first conductive plate and the second conductive plate;
a third conductive plate disposed over the first insulating plate;
a second insulating plate disposed over the third conductive plate;
a fourth conductive plate disposed on one side of the first conductive plate opposite to the second conductive plate;
a first conductive spacer disposed on the first insulating plate adjacent to the fourth conductive plate;
a first conductive via penetrating the second insulating plate, the first insulating plate, and the first conductive plate, wherein the first conductive via is electrically coupled to the first conductive plate; and
a second conductive via penetrating the fourth conductive plate, wherein the second conductive via is electrically coupled to the fourth conductive plate.