US 12,446,222 B2
Semiconductor device, electronic system including the same, and method of fabricating the same
Seokcheon Baek, Hwaseong-si (KR); Miram Kwon, Suwon-si (KR); and Seongjun Seo, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 21, 2022, as Appl. No. 17/869,909.
Claims priority of application No. 10-2021-0124188 (KR), filed on Sep. 16, 2021.
Prior Publication US 2023/0084557 A1, Mar. 16, 2023
Int. Cl. H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate including a cell array region and a connection region; and
a stack structure including dielectric layers and electrodes that are vertically and alternately stacked on the substrate, the stack structure having a first pad part, a first fence part, a second pad part, and a second fence part that are sequentially arranged along a first direction,
wherein each of the first pad part and the second pad part of the stack structure includes a first stepwise structure along the first direction, and a second stepwise structure along a second direction that intersects the first direction,
wherein each of the first fence part and the second fence part of the stack structure includes dummy electrodes at same levels as those of the electrodes, the dummy electrodes being spaced apart in the first direction from the electrodes,
wherein the dummy electrodes on the first fence part have a first dummy stepwise structure along the first direction, and a second dummy stepwise structure along the second direction, and
wherein sidewalls of the electrodes that define the second stepwise structure of the second pad part are offset from sidewalls of the dummy electrodes that define the second dummy stepwise structure of the first pad part.