US 12,446,217 B2
3D NAND memory device and method of forming the same
Ruo Fang Zhang, Wuhan (CN); Enbo Wang, Wuhan (CN); Haohao Yang, Wuhan (CN); Qianbing Xu, Wuhan (CN); Yushi Hu, Wuhan (CN); and Fushan Zhang, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Hubei (CN)
Filed on Jun. 8, 2023, as Appl. No. 18/331,217.
Application 18/331,217 is a continuation of application No. 17/446,006, filed on Aug. 26, 2021, granted, now 11,737,263.
Application 17/446,006 is a continuation of application No. 16/367,299, filed on Mar. 28, 2019, granted, now 11,145,667, issued on Oct. 12, 2021.
Application 16/367,299 is a continuation of application No. PCT/CN2018/105442, filed on Sep. 13, 2018.
Prior Publication US 2023/0337423 A1, Oct. 19, 2023
Int. Cl. H10B 41/27 (2023.01); G11C 5/06 (2006.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 41/27 (2023.02) [G11C 5/063 (2013.01); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A three-dimensional memory device, comprising:
an interconnect structure; and
a first deck formed over the interconnect structure in a first direction, the first deck including a first stack and a first channel structure, wherein:
the first stack includes alternated first insulating layers and first word line layers in the first direction,
the first channel structure extends through the first stack in the first direction and includes a first channel dielectric region and a first channel layer,
the first channel layer includes a first portion formed along the first channel dielectric region, a third portion formed in the interconnect structure, and a second portion between the first portion and the third portion in the first direction,
the first channel dielectric region is formed between the first stack and the first portion of the first channel layer in a second direction intersecting the first direction, disposed over a top surface of the interconnect structure, and
the second portion protrudes toward the first insulating layers relative to the third portion in the second direction.