US 12,446,213 B2
Method for forming semiconductor device and semiconductor device
Guangsu Shao, Hefei (CN); Deyuan Xiao, Hefei (CN); and Weiping Bai, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN); and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, Beijing (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN); and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, Beijing (CN)
Filed on Sep. 26, 2022, as Appl. No. 17/952,383.
Claims priority of application No. 202111376056.3 (CN), filed on Nov. 19, 2021.
Prior Publication US 2023/0015279 A1, Jan. 19, 2023
Int. Cl. H10B 12/00 (2023.01); G11C 5/06 (2006.01)
CPC H10B 12/488 (2023.02) [G11C 5/063 (2013.01); H10B 12/033 (2023.02); H10B 12/315 (2023.02); H10B 12/482 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device, comprising:
providing a stacked structure, which comprises a substrate, and sacrificial layers and semiconductor layers alternately stacked on a surface of the substrate, wherein multiple first grooves and semiconductor pillars extending in a first direction are comprised in the sacrificial layers and the semiconductor layers, and the first grooves and the semiconductor pillars are arranged at intervals;
forming word line pillars in a second direction, wherein the word line pillars intersect with the semiconductor pillars and surround the semiconductor pillars, and the first direction is perpendicular to the second direction;
forming sources and drains respectively on either side of the semiconductor pillars surrounded by the word line pillars by an epitaxial growth process;
forming bit lines on a side of the sources or the drains, wherein the bit lines are connected with the sources or the drains, the bit lines extend in a third direction, the first direction, the second direction and the third direction are pairwise perpendicular; and
forming capacitors on a side of the sources or the drains where the bit lines are not formed to form a semiconductor device.