US 12,446,211 B2
Memory device having ultra-lightly doped region
Chung-Lin Huang, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Dec. 9, 2022, as Appl. No. 18/078,349.
Prior Publication US 2024/0196595 A1, Jun. 13, 2024
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/34 (2023.02) [H10B 12/053 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a semiconductor substrate including a word line extending into the semiconductor substrate,
wherein the semiconductor substrate is defined with a source region, a drain region and an ultra-lightly doped region under the drain region, the word line is disposed between the source region and the drain region, and the ultra-lightly doped region is disposed at a sidewall of the word line;
wherein the semiconductor substrate is further defined with a heavily doped region under the drain region and a lightly doped region above the ultra-lightly doped region.