US 12,446,205 B2
Semiconductor device including capacitor structure and method for manufacturing the same
Intak Jeon, Seoul (KR); and Younglim Park, Anyang-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 22, 2022, as Appl. No. 17/950,185.
Claims priority of application No. 10-2022-0000859 (KR), filed on Jan. 4, 2022.
Prior Publication US 2023/0232606 A1, Jul. 20, 2023
Int. Cl. H10B 12/00 (2023.01); H10D 1/68 (2025.01)
CPC H10B 12/033 (2023.02) [H10B 12/315 (2023.02); H10D 1/696 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a capacitor contact structure electrically connected to the substrate;
a lower electrode connected to the capacitor contact structure;
a capacitor insulating layer covering the lower electrode; and
an upper electrode covering the capacitor insulating layer,
wherein the upper electrode comprises a multiple layer on the capacitor insulating layer, and a cover layer on the multiple layer,
wherein the multiple layer comprises a first electrode layer, a second electrode layer, and a first metal silicide layer between the first and second electrode layers, and
wherein a work function of the first metal silicide layer is greater than a work function of the first electrode layer and a work function of the second electrode layer.