US 12,445,752 B2
Image sensor device and operation method thereof
Yooseung Jung, Suwon-si (KR); Seokyong Hong, Suwon-si (KR); Jahyun Koo, Suwon-si (KR); Junyoung Kil, Suwon-si (KR); and Dahsom Kim, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-Si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 24, 2023, as Appl. No. 18/383,070.
Claims priority of application No. 10-2023-0055854 (KR), filed on Apr. 28, 2023.
Prior Publication US 2024/0365026 A1, Oct. 31, 2024
Int. Cl. H04N 25/78 (2023.01); H04N 25/59 (2023.01); H04N 25/709 (2023.01); H04N 25/76 (2023.01); H04N 25/766 (2023.01); H04N 25/77 (2023.01); H04N 25/772 (2023.01); H04N 25/79 (2023.01)
CPC H04N 25/78 (2023.01) [H04N 25/709 (2023.01); H04N 25/77 (2023.01); H04N 25/7795 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor device, comprising:
a first pixel located at a first row and comprising a first select transistor;
a second pixel located at a second row and comprising a second select transistor, the second row being different from the first row; and
a column line connected to the first pixel and the second pixel,
wherein, during a first time period, a floating diffusion node of the first pixel is reset, during a second time period, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor, the second time period being included in the first time period, the first voltage being determined based on a voltage of a floating diffusion node which has been reset of the second pixel.