US 12,445,750 B2
Solid-state image sensor, imaging device, and electronic device
Takashi Machida, Tokyo (JP); and Kazuyoshi Yamashita, Kanagawa (JP)
Assigned to Sony Group Corporation, Tokyo (JP)
Filed by SONY GROUP CORPORATION, Tokyo (JP)
Filed on Apr. 25, 2023, as Appl. No. 18/306,496.
Application 18/306,496 is a continuation of application No. 17/215,203, filed on Mar. 29, 2021, granted, now 11,678,088.
Application 17/215,203 is a continuation of application No. 16/892,048, filed on Jun. 3, 2020, granted, now 10,999,545, issued on May 4, 2021.
Application 16/892,048 is a continuation of application No. 16/568,993, filed on Sep. 12, 2019, abandoned.
Application 16/568,993 is a continuation of application No. 16/388,685, filed on Apr. 18, 2019, granted, now 10,594,969, issued on Mar. 17, 2020.
Application 16/388,685 is a continuation of application No. 15/945,539, filed on Apr. 4, 2018, granted, now 10,313,618, issued on Jun. 4, 2019.
Application 15/945,539 is a continuation of application No. 15/117,021, granted, now 9,986,186, issued on May 29, 2018, previously published as PCT/JP2015/084253, filed on Dec. 7, 2015.
Claims priority of application No. 2014-256046 (JP), filed on Dec. 18, 2014.
Prior Publication US 2023/0262359 A1, Aug. 17, 2023
Int. Cl. H04N 25/76 (2023.01); G01S 7/4863 (2020.01); G01S 17/89 (2020.01); G01S 17/931 (2020.01); H01L 23/522 (2006.01); H04N 23/67 (2023.01); H04N 25/57 (2023.01); H04N 25/70 (2023.01); H04N 25/78 (2023.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 99/00 (2025.01)
CPC H04N 25/76 (2023.01) [G01S 7/4863 (2013.01); G01S 17/89 (2013.01); G01S 17/931 (2020.01); H01L 23/5223 (2013.01); H04N 23/67 (2023.01); H04N 25/57 (2023.01); H04N 25/70 (2023.01); H04N 25/78 (2023.01); H10F 39/12 (2025.01); H10F 39/803 (2025.01); H10F 99/00 (2025.01); H04N 23/672 (2023.01)] 17 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a photoelectric conversion region;
a transfer transistor;
a switch transistor; and
a wiring layer including:
a first electrode coupled to the switch transistor;
a second electrode opposed to the first electrode, the second electrode coupled to a predetermined potential; and
a region disposed between the first electrode and the second electrode,
wherein a capacitor includes the first electrode and the second electrode,
wherein the photoelectric conversion region is electrically connected to thea source follower circuit via the transfer transistor,
wherein the capacitor is electrically connected to the source follower circuit via the switch transistor,
wherein the switch transistor is electrically connected to the source follower circuit, and
wherein the source follower circuit is electrically connected to a selection transistor.