US 12,445,745 B2
Image sensor and pixel-level exposure control method
Ming Liu, Shenzhen (CN)
Assigned to Shenzhen MetaSilicon Co., Ltd., Shenzhen (CN)
Filed by Shenzhen MetaSilicon Co., Ltd., Shenzhen (CN)
Filed on Jun. 1, 2023, as Appl. No. 18/327,769.
Claims priority of application No. 202210987895.7 (CN), filed on Aug. 17, 2022.
Prior Publication US 2024/0064423 A1, Feb. 22, 2024
Int. Cl. H04N 25/535 (2023.01); G06V 10/20 (2022.01); G06V 10/26 (2022.01); H04N 23/73 (2023.01); H04N 23/741 (2023.01); H04N 25/583 (2023.01)
CPC H04N 25/535 (2023.01) [G06V 10/255 (2022.01); G06V 10/26 (2022.01); H04N 23/73 (2023.01); H04N 23/741 (2023.01); H04N 25/583 (2023.01)] 14 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a two-dimensional pixel array including a plurality of sensor pixels, wherein the sensor pixels are configured to collect image data of a target scene according to an adjustable exposure time;
an image segmentation module configured to analyze image data collected by the two-dimensional pixel array, extract image features and establish a plurality of pixel partitions based on sensor pixels with same image features;
a prediction module configured to obtain a predicted exposure time according to image features of pixel partitions; and
a regional exposure control module configured to generate a control signal for an exposure time according to the predicted exposure time, and send the control signal to sensor pixels of a pixel partition corresponding to the predicted exposure time;
wherein the sensor pixel comprises:
a photodiode;
a floating diffusion;
a transfer transistor having a source and a drain coupled to the photodiode and the floating diffusion respectively; and
a transfer gate control unit coupled to a gate of the transfer transistor, and the sensor pixels are configured such that electrons accumulated by the photodiode during exposure are transferred to the floating diffusion only when the transfer transistor and the transfer gate control unit are simultaneously turned on.