US 12,445,122 B2
Semiconductor device
Teruaki Nagahara, Tokyo (JP); and Kosuke Yamaguchi, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Feb. 20, 2024, as Appl. No. 18/581,866.
Claims priority of application No. 2023-102261 (JP), filed on Jun. 22, 2023.
Prior Publication US 2024/0429913 A1, Dec. 26, 2024
Int. Cl. H03K 17/00 (2006.01); H03K 17/14 (2006.01)
CPC H03K 17/145 (2013.01) 8 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a parallel circuit in which a first semiconductor switching element and a second semiconductor switching element having a larger bandgap than the first semiconductor switching element are parallelly connected; and
a gate drive circuit capable of changing a time of continuing a state of ON of the first semiconductor switching element and the second semiconductor switching element based on the state of ON or OFF of an input signal, wherein
when a state continuing time which is a time during which the state of the input signal continues is equal to or larger than a threshold value, the gate drive circuit turns off the second semiconductor switching element while keeping ON of the first semiconductor switching element, or reduces a power conduction capability of the second semiconductor switching element while keeping ON of the first semiconductor switching element.