US 12,445,105 B2
Elastic wave device and method for manufacturing the same
Munehisa Watanabe, Nagaokakyo (JP); Hideki Iwamoto, Nagaokakyo (JP); Hajime Kando, Nagaokakyo (JP); and Syunsuke Kido, Nagaokakyo (JP)
Assigned to MURATA MANUFACTURING CO., LTD., Kyoto (JP)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP)
Filed on Nov. 21, 2023, as Appl. No. 18/515,882.
Application 18/515,882 is a continuation of application No. 17/968,828, filed on Oct. 19, 2022, granted, now 11,863,152.
Application 17/968,828 is a continuation of application No. 16/680,891, filed on Nov. 12, 2019, granted, now 11,509,280, issued on Nov. 22, 2022.
Application 16/680,891 is a continuation of application No. 15/666,596, filed on Aug. 2, 2017, granted, now 10,511,279, issued on Dec. 17, 2019.
Application 15/666,596 is a continuation of application No. 15/212,489, filed on Jul. 18, 2016, granted, now 9,831,848, issued on Nov. 28, 2017.
Application 15/212,489 is a continuation of application No. 13/920,492, filed on Jun. 18, 2013, granted, now 9,431,996, issued on Aug. 30, 2016.
Application 13/920,492 is a continuation of application No. PCT/JP2011/079496, filed on Dec. 20, 2011.
Claims priority of application No. 2010-288453 (JP), filed on Dec. 24, 2010.
Prior Publication US 2024/0088863 A1, Mar. 14, 2024
Int. Cl. H03H 9/02 (2006.01); H03H 3/02 (2006.01); H03H 3/04 (2006.01); H03H 3/08 (2006.01); H03H 3/10 (2006.01); H03H 9/54 (2006.01); H10N 30/01 (2023.01); H10N 30/87 (2023.01)
CPC H03H 9/0222 (2013.01) [H03H 3/02 (2013.01); H03H 3/04 (2013.01); H03H 3/08 (2013.01); H03H 3/10 (2013.01); H03H 9/02574 (2013.01); H03H 9/02834 (2013.01); H03H 9/54 (2013.01); H10N 30/01 (2023.02); H10N 30/87 (2023.02); H10N 30/877 (2023.02); H03H 2003/023 (2013.01); H03H 2003/027 (2013.01); Y10T 29/42 (2015.01); Y10T 29/49005 (2015.01); Y10T 29/49155 (2015.01)] 15 Claims
OG exemplary drawing
 
1. An elastic wave device comprising:
a supporting substrate;
a first film stacked on the supporting substrate;
a piezoelectric film stacked on the first film; and
an IDT electrode disposed on a surface of the piezoelectric film; wherein
the supporting substrate includes at least one of silicon, sapphire, silicon carbide, and quartz;
the first film includes at least one of silicon oxide, silicon oxynitride, tantalum oxide, media mainly composed of these materials, and media mainly composed of mixtures of these materials;
the at least one of silicon oxide, silicon oxynitride, tantalum oxide, media mainly composed of these materials, and media mainly composed of mixtures of these materials of the first film is in direct contact with the supporting substrate;
the piezoelectric film includes lithium tantalate or lithium niobate;
a thickness of the piezoelectric film is about 1.5λ or less, and a thickness of the first film is about 2λ or less, where A is a wavelength of an elastic wave determined by an electrode period of the IDT electrode; and
a surface acoustic wave propagates in the piezoelectric film.