US 12,445,102 B2
Method for preparing a thin layer of ferroelectric material
Alexis Drouin, La Buissiere (FR); Isabelle Huyet, Crolles (FR); and Morgane Logiou, Crolles (FR)
Assigned to Soitec, Bernin (FR)
Appl. No. 17/430,662
Filed by Soitec, Bernin (FR)
PCT Filed Mar. 26, 2020, PCT No. PCT/EP2020/058460
§ 371(c)(1), (2) Date Aug. 12, 2021,
PCT Pub. No. WO2020/200986, PCT Pub. Date Oct. 8, 2020.
Claims priority of application No. 1903359 (FR), filed on Mar. 29, 2019.
Prior Publication US 2024/0072753 A1, Feb. 29, 2024
Int. Cl. H01R 31/00 (2006.01); H03H 3/08 (2006.01); H03H 9/02 (2006.01)
CPC H03H 3/08 (2013.01) [H03H 9/02559 (2013.01); H03H 9/02574 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for preparing a thin monodomain layer of ferroelectric material, comprising:
implanting light species in a first face of a ferroelectric donor substrate to form an embrittlement plane and define a first layer between the embrittlement plane and the first face of the ferroelectric donor substrate;
assembling the first face of the ferroelectric donor substrate to a support substrate using a dielectric assembly layer;
fracturing the ferroelectric donor substrate at the embrittlement plane to transfer the first layer onto the support substrate and expose a free face of the first layer; and
finishing the first layer, the finishing comprising a heat treatment of the free face of the first layer, followed by thinning of the first layer to form the thin monodomain layer;
wherein the dielectric assembly layer comprises an oxide preventing diffusion of hydrogen toward the first layer, or the dielectric assembly layer comprises a barrier preventing diffusion of hydrogen toward the first layer.