US 12,444,935 B2
Electrostatic discharge protection circuit
Chih-Hsuan Lin, Hsinchu (TW); Shao-Chang Huang, Hsinchu (TW); Yeh-Ning Jou, Hsinchu (TW); Chieh-Yao Chuang, Kaohsiung (TW); Hwa-Chyi Chiou, Hsinchu (TW); Wen-Hsin Lin, Hsinchu County (TW); Kai-Chieh Hsu, Taoyuan (TW); Ting-Yu Chang, Hsinchu County (TW); and Hsien-Feng Liao, Taichung (TW)
Assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu (TW)
Filed by Vanguard International Semiconductor Corporation, Hsinchu (TW)
Filed on Nov. 1, 2023, as Appl. No. 18/499,501.
Prior Publication US 2025/0141220 A1, May 1, 2025
Int. Cl. H02H 9/04 (2006.01)
CPC H02H 9/046 (2013.01) 12 Claims
OG exemplary drawing
 
1. An electrostatic discharge protection circuit coupled to a first bonding pad, comprising:
an electrostatic discharge detection circuit detecting whether an electrostatic discharge event occurs on the first bonding pad to generate a detection signal on a first node;
a P-type transistor comprising a source coupled to the first bonding pad, a drain coupled to a second node, and a gate coupled to the first node to receive the detection signal;
a first N-type transistor comprising a drain coupled to the second node, a source coupled to a ground, and a gate coupled to a second bonding pad; and
a discharge circuit coupled between the first bonding pad and the ground and controlled by a driving signal on the second node;
wherein in response to that the electrostatic discharge protection circuit is in an operation mode, the first bonding pad receives a first voltage, and the second bonding pad receives a second voltage.