US 12,444,779 B2
Semiconductor device sensor unit
Takanori Matsuzaki, Atsugi (JP); Takayuki Ikeda, Atsugi (JP); Munehiro Kozuma, Atsugi (JP); Ryota Tajima, Isehara (JP); and Hiroki Inoue, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/291,021
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
PCT Filed Nov. 13, 2019, PCT No. PCT/IB2019/059724
§ 371(c)(1), (2) Date May 4, 2021,
PCT Pub. No. WO2020/109901, PCT Pub. Date Jun. 4, 2020.
Claims priority of application No. 2018-220233 (JP), filed on Nov. 26, 2018.
Prior Publication US 2021/0391604 A1, Dec. 16, 2021
Int. Cl. H01M 10/48 (2006.01); H02J 7/00 (2006.01); H10D 84/80 (2025.01)
CPC H01M 10/486 (2013.01) [H01M 10/48 (2013.01); H02J 7/0047 (2013.01); H02J 7/007192 (2020.01); H10D 84/811 (2025.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a sensor unit;
a first memory unit;
a second memory unit; and
a determination unit,
wherein the sensor unit supplies a sensor signal representing charging current and charging voltage obtained from a secondary battery,
wherein the first memory unit retains the sensor signal as analog data,
wherein the second memory unit retains standard data as analog data and allowable difference information as analog data,
wherein the standard data are average data of an electrically-connected load obtained by sampling charging characteristics performed more than once,
wherein the determination unit compares the sensor signal with the standard data, and
wherein the determination unit supplies a control signal in a case where a difference between the sensor signal and the standard data exceeds the allowable difference information.