US 12,444,767 B2
Negative active material for rechargeable lithium battery, method of preparing the same and rechargeable lithium battery including the same
Sang-Eun Park, Yongin-si (KR); and Young-Ugk Kim, Yongin-si (KR)
Assigned to Samsung SDI Co., Ltd., Yongin-si (KR)
Filed by SAMSUNG SDI CO., LTD., Yongin-si (KR)
Filed on Nov. 13, 2023, as Appl. No. 18/507,989.
Application 18/507,989 is a continuation of application No. 17/164,800, filed on Feb. 1, 2021, granted, now 11,830,972.
Application 17/164,800 is a continuation of application No. 13/440,918, filed on Apr. 5, 2012, granted, now 11,502,326, issued on Nov. 15, 2022.
Claims priority of provisional application 61/537,309, filed on Sep. 21, 2011.
Prior Publication US 2024/0088428 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01M 4/36 (2006.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); H01M 4/38 (2006.01); H01M 4/48 (2010.01); H01M 4/505 (2010.01); H01M 4/525 (2010.01); H01M 4/58 (2010.01); H01M 4/583 (2010.01); H01M 4/62 (2006.01); H01M 10/052 (2010.01); H01M 10/0525 (2010.01); H01M 10/0569 (2010.01); H01M 10/0587 (2010.01); H01M 50/417 (2021.01); H01M 50/434 (2021.01); H01M 4/02 (2006.01)
CPC H01M 10/052 (2013.01) [H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 4/386 (2013.01); H01M 4/483 (2013.01); H01M 4/505 (2013.01); H01M 4/525 (2013.01); H01M 4/58 (2013.01); H01M 4/583 (2013.01); H01M 4/623 (2013.01); H01M 10/0525 (2013.01); H01M 10/0569 (2013.01); H01M 10/0587 (2013.01); H01M 50/417 (2021.01); H01M 50/434 (2021.01); H01M 2004/027 (2013.01); H01M 2004/028 (2013.01); H01M 2300/0031 (2013.01); H01M 2300/0034 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A negative active material for a rechargeable lithium battery, comprising:
a core comprising a Si grain in a SiO2 matrix; and
a coating layer on at least a portion of the core, the coating layer comprising carbon,
wherein in the core of the negative active material, amounts of the SiO2 matrix and the Si grain are sufficient to yield an oxygen and silicon content represented by SiOx in which 1≤x≤1.2, and
wherein the coating layer comprises SiC, with a peak area ratio of the SiC (111) plane to the Si (111) plane as measured by X-ray diffraction analysis using a CuKα ray in a range from about 0.1 to about 0.5.