US 12,444,751 B2
Positive current collector, positive electrode plate, battery, and apparatus
Chengdu Liang, Ningde (CN); Huafeng Huang, Ningde (CN); and Qisen Huang, Ningde (CN)
Assigned to Contemporary Amperex Technology (Hong Kong) Limited, Hong Kong (CN)
Filed by CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED, Hong Kong (CN)
Filed on Oct. 28, 2021, as Appl. No. 17/512,703.
Application 17/512,703 is a continuation of application No. PCT/CN2019/124825, filed on Dec. 12, 2019.
Claims priority of application No. 201910351364.7 (CN), filed on Apr. 28, 2019.
Prior Publication US 2022/0052349 A1, Feb. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01M 4/66 (2006.01); H01M 4/134 (2010.01); H01M 4/02 (2006.01)
CPC H01M 4/667 (2013.01) [H01M 4/134 (2013.01); H01M 2004/028 (2013.01); H01M 2220/20 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A positive current collector comprising
a support layer having two surfaces opposite to each other in a thickness direction of the support layer;
a conductive layer arranged on at least one of the two surfaces of the support layer;
wherein the conductive layer has a thickness D1 satisfying 300 nm≤D1≤2 μm; and
when the positive current collector has a tensile strain of 3% or more, the conductive layer has a sheet resistance growth rate of T≥50%; and
wherein the positive current collector further comprises a protective layer in which the protective layer is arranged between the conductive layer and the support layer, or the protective layer is arranged on the surface of the conductive layer facing away the surface of the support layer (101); and the protective layer (103) has a thickness D3 satisfying 20 nm≤D3≤50 nm;
alternatively,
wherein the positive current collector further comprises a protective layer in which the protective layer is arranged between the conductive layer and the support layer, and the protective layer is arranged on the surface of the conductive layer facing away the surface of the support layer; and the protective layer has a thickness D3 satisfying 8 nm≤D3<50 nm; and
wherein the support layer has a Young's modulus of E≥4 GPa; and/or the support layer has an elongation at break of greater than or equal to that of the conductive layer; and
wherein the conductive layer is a vapor deposited layer formed by vacuum evaporation of a metal wire at a temperature of 1300° C.˜2000° C. in a vacuum chamber.