US 12,444,737 B2
Anode material, electrochemical device and electronic device comprising the same
Daoyi Jiang, Ningde (CN); Zhihuan Chen, Ningde (CN); Hang Cui, Ningde (CN); and Yuansen Xie, Ningde (CN)
Assigned to Ningde Amperex Technology Limited, Ningde (CN)
Filed by Ningde Amperex Technology Limited, Ningde (CN)
Filed on Oct. 29, 2021, as Appl. No. 17/514,461.
Application 17/514,461 is a continuation of application No. PCT/CN2019/118581, filed on Nov. 14, 2019.
Prior Publication US 2022/0052328 A1, Feb. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01M 4/134 (2010.01); C01B 33/113 (2006.01); C01F 7/304 (2022.01); C01G 23/04 (2006.01); H01M 4/36 (2006.01); H01M 4/48 (2010.01); H01M 4/62 (2006.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01)
CPC H01M 4/483 (2013.01) [C01B 33/113 (2013.01); C01F 7/304 (2013.01); C01G 23/04 (2013.01); H01M 4/366 (2013.01); H01M 4/625 (2013.01); H01M 10/0525 (2013.01); C01P 2002/72 (2013.01); C01P 2004/51 (2013.01); C01P 2004/64 (2013.01); C01P 2006/40 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An anode material, comprising a silicon composite substrate, wherein in an X-ray diffraction pattern of the anode material, the highest intensity at 2θ within the range of 28.0° to 29.0° is I2, and the highest intensity at 2θ within the range of 20.5° to 21.5° is I1, wherein 0<I2/I1≤1, wherein the Dv50 of the silicon composite substrate is from 2.5 μm to 10 μm, and a particle size distribution of the silicon composite substrate meets: 0.3≤Dn10/Dv50≤0.6.