US 12,444,723 B2
Heterogeneous bonding for photonic integration
Stephen B. Krasulick, Albuquerque, NM (US); and John Dallesasse, Geneva, IL (US)
Assigned to Skorpios Technologies, Inc., Albuquerque, NM (US)
Filed by Skorpios Technologies., Inc., Albuquerque, NM (US)
Filed on Sep. 20, 2022, as Appl. No. 17/949,022.
Application 17/949,022 is a division of application No. 16/452,212, filed on Jun. 25, 2019, granted, now 11,482,513.
Application 14/135,006 is a division of application No. 12/902,621, filed on Oct. 12, 2010, granted, now 8,630,326, issued on Jan. 14, 2014.
Application 16/452,212 is a continuation of application No. 15/633,343, filed on Jun. 26, 2017, granted, now 10,373,939.
Application 15/633,343 is a continuation of application No. 14/880,936, filed on Oct. 12, 2015, granted, now 9,709,735, issued on Jul. 18, 2017.
Application 14/880,936 is a continuation of application No. 14/135,006, filed on Dec. 19, 2013, granted, now 9,190,400, issued on Nov. 17, 2015.
Claims priority of provisional application 61/251,132, filed on Oct. 13, 2009.
Prior Publication US 2023/0124445 A1, Apr. 20, 2023
Int. Cl. G02B 6/122 (2006.01); G02B 6/12 (2006.01); G02B 6/136 (2006.01); H01L 25/00 (2006.01); H01L 25/075 (2006.01); H01L 25/16 (2023.01); H10H 20/01 (2025.01); H10H 20/84 (2025.01); H10H 20/85 (2025.01); H10H 20/857 (2025.01); H01S 5/02 (2006.01); H01S 5/0237 (2021.01); H01S 5/10 (2021.01)
CPC H01L 25/167 (2013.01) [H01L 25/0753 (2013.01); H01L 25/16 (2013.01); H01L 25/50 (2013.01); G02B 6/12002 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12147 (2013.01); G02B 6/1225 (2013.01); G02B 6/136 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01); H01S 5/021 (2013.01); H01S 5/0237 (2021.01); H01S 5/1003 (2013.01); H10H 20/018 (2025.01); H10H 20/84 (2025.01); H10H 20/8506 (2025.01); H10H 20/857 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A method of forming an integrated optical device, comprising:
providing a substrate that forms:
an upper substrate surface, and
a recess within the upper substrate surface, the recess forming a lower substrate surface, the lower substrate surface and the upper substrate surface defining a recess height therebetween, and wherein one or more first metal pads are deposited on to the lower substrate surface within the recess;
providing a compound semiconductor device comprising an upper device surface and a lower device surface, wherein:
the upper device surface and the lower device surface define a device height therebetween, and
one or more second metal pads are deposited on to the lower device surface;
bonding the one or more first metal pads to respective ones of the one or more second metal pads, with respective portions of a bonding metal, wherein the bonding metal comprises InxPdy; and
depositing a planarizing material that fills at least a portion of the recess.