US 12,444,722 B2
Display panel comprising a substrate including a first region and a second region and display apparatus having the same
Zhongshou Huang, Shanghai (CN)
Assigned to SeeYA Optronics Co., Ltd., Shanghai (CN)
Filed by SeeYa Optronics Co., Ltd., Shanghai (CN)
Filed on Sep. 13, 2022, as Appl. No. 17/943,989.
Claims priority of application No. 202111165265.3 (CN), filed on Sep. 30, 2021.
Prior Publication US 2023/0093906 A1, Mar. 30, 2023
Int. Cl. H01L 29/08 (2006.01); H01L 25/16 (2023.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/121 (2023.01)
CPC H01L 25/167 (2013.01) [H10D 86/471 (2025.01); H10D 86/60 (2025.01); H10K 59/1213 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A display panel, comprising a single-crystal silicon (c-Si) substrate which comprises a first region and a second region;
wherein the first region comprises a c-Si transistor circuit fabricated in the c-Si substrate, and the c-Si transistor circuit comprises a signal processing circuit and a control circuit of the display panel;
wherein the second region comprises an array of pixel circuits of the display panel and a light-emitting layer superimposed above the array of pixel circuits, the array of pixel circuits is fabricated in the c-Si substrate and comprises a plurality of compound semiconductor thin-film transistors, and the light-emitting layer which is controlled by the array of pixel circuits comprises at least one of the followings: an OLED film, an inorganic LED chip, a nano-sized light-emitting particle or an inorganic electroluminescent film;
wherein the first region or the second region further comprises row scanning circuits located on one side or two sides of the array of pixel circuits;
wherein the array of pixel circuits further comprises a plurality of c-Si transistors, and the light-emitting layer comprises a hybrid light-emitting layer including the OLED film and the inorganic LED chip; and
wherein the OLED film is driven by the plurality of compound semiconductor thin-film transistors, and the inorganic LED chip is driven by the plurality of c-Si transistors in the array of pixel circuits.