US 12,444,711 B2
Semiconductor device and method for manufacturing same
Masayuki Miura, Ota Tokyo (JP)
Assigned to KIOXIA CORPORATION
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Aug. 26, 2022, as Appl. No. 17/896,796.
Claims priority of application No. 2022-021539 (JP), filed on Feb. 15, 2022.
Prior Publication US 2023/0260966 A1, Aug. 17, 2023
Int. Cl. H01L 21/683 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 25/0657 (2013.01) [H01L 21/6835 (2013.01); H01L 25/50 (2013.01); H01L 2221/68359 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06586 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first stacked body provided above a substrate, and including a plurality of first semiconductor chips stacked on top of one another;
a second stacked body provided further above the first stacked body, and including a plurality of second semiconductor chips stacked on top of one another, wherein the first semiconductor chips each have a first pad facing toward the substrate, and the second semiconductor chips each have a second pad facing away from the substrate;
a first resin layer provided on the substrate and covering the first stacked body; and
a second resin layer provided on the first resin layer and covering the second stacked body, wherein
the first resin layer and the second resin layer are different in at least one of a curing shrinkage ratio, an elastic modulus, a linear expansion coefficient, or a glass transition point.