| CPC H01L 24/05 (2013.01) [H01L 24/03 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05565 (2013.01); H01L 2224/0569 (2013.01); H01L 2924/066 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/351 (2013.01)] | 16 Claims |
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1. A semiconductor device comprising:
a semiconductor chip having an element forming surface;
an insulating layer formed on the element forming surface of the semiconductor chip;
a barrier conductive layer formed on the insulating layer;
a pad wiring layer including a first conductive layer formed on the barrier conductive layer and containing a first conductive material and a second conductive layer formed on the first conductive layer and containing a second conductive material different from the first conductive material, wherein the second conductive layer includes an eaves portion protruding outward with respect to an end surface of the first conductive layer;
a bonding member that is bonded to the pad wiring layer and supplies electric power to an element of the element forming surface; and
a coating insulating film that is selectively formed on the insulating layer below the eaves portion, exposes an upper surface of the insulating layer to a peripheral region of the pad wiring layer, and covers the end surface of the first conductive layer,
wherein the coating insulating film coats both an upper surface and a side surface of an end portion of the barrier conductive layer.
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