US 12,444,703 B2
Manufacturing method of semiconductor chip
Yongbum Kwon, Yongin-si (KR); and Unbyoung Kang, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 13, 2022, as Appl. No. 17/931,796.
Claims priority of application No. 10-2021-0134696 (KR), filed on Oct. 12, 2021.
Prior Publication US 2023/0114550 A1, Apr. 13, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01)
CPC H01L 24/03 (2013.01) [H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 24/16 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03602 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/03901 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05011 (2013.01); H01L 2224/05078 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05578 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05681 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/80006 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/8083 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor chip, the method comprising:
forming a photoresist pattern having a plurality of openings on a semiconductor wafer, each of the plurality of openings defining a bonding pad formation region;
forming a plurality of bonding pads, each bonding pad in a respective one of the plurality of openings;
removing the photoresist pattern;
sequentially forming an insulating layer and a polishing stop film on the semiconductor wafer and the plurality of bonding pads, wherein the insulating layer and the polishing stop film form a plurality of convex portions, each convex portion above a respective one of the plurality of bonding pads;
polishing the plurality of convex portions to expose a plurality of regions of the insulating layer;
dry etching the exposed plurality of regions of the insulating layer to form a groove in each of the exposed plurality of regions of the insulating layer;
further polishing the plurality of convex portions to expose an upper surface of each of the plurality of bonding pads; and
removing the polishing stop film to expose the insulating layer.