US 12,444,694 B2
Semiconductor device and method of forming selective EMI shielding with slotted substrate
JinHee Jung, Incheon (KR); ChangOh Kim, Incheon (KR); JiWon Lee, Seoul (KR); and YuJeong Jang, Incheon (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on Jan. 5, 2022, as Appl. No. 17/647,055.
Prior Publication US 2023/0215812 A1, Jul. 6, 2023
Int. Cl. H01L 25/16 (2023.01); H01L 21/26 (2006.01); H01L 21/50 (2006.01); H01L 21/52 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/12 (2006.01); H01L 23/552 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/561 (2013.01); H01L 21/78 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, comprising:
providing a substrate including a plurality of conductive layers and a plurality of insulating layers interleaved between the conductive layers;
forming a slot completely through the substrate;
disposing a first electrical component over the substrate adjacent to the slot, wherein the substrate includes the plurality of conductive layers and the plurality of insulating layers prior to disposing the first electrical component over the substrate;
depositing an encapsulant over the first electrical component and substrate after forming the slot, wherein a surface of the encapsulant is coplanar to a surface of the substrate within the slot, and wherein the slot remains devoid of the encapsulant;
forming a shielding layer over the encapsulant and physically contacting the surface of the substrate within the slot; and
singulating the substrate to form a semiconductor package with the first electrical component after forming the shielding layer.