US 12,444,690 B2
Semiconductor devices and methods of manufacturing semiconductor devices
Jin Young Khim, Seoul (KR); Won Chul Do, Seoul (KR); Sang Hyoun Lee, Incheon (KR); Ji Hun Yi, Incheon (KR); and Ji Yeon Ryu, Incheon (KR)
Assigned to Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed by Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed on Jan. 18, 2024, as Appl. No. 18/416,215.
Application 18/416,215 is a continuation of application No. 18/096,406, filed on Jan. 12, 2023, granted, now 11,881,458.
Application 18/096,406 is a continuation of application No. 16/917,552, filed on Jun. 30, 2020, granted, now 11,562,964, issued on Jan. 24, 2023.
Application 16/917,552 is a continuation of application No. 16/821,899, filed on Mar. 17, 2020, granted, now 11,715,699, issued on Aug. 1, 2023.
Prior Publication US 2024/0153882 A1, May 9, 2024
Int. Cl. H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01)
CPC H01L 23/5389 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/214 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first substrate comprising:
a first dielectric structure; and
a first conductive structure through the first dielectric structure and comprising one or more first conductive redistribution layers;
an electronic component over the first substrate, wherein the electronic component is coupled with the first conductive structure;
a second substrate over the electronic component and comprising:
a second dielectric structure; and
a second conductive structure through the second dielectric structure and comprising one or more second conductive redistribution layers;
a conductive pillar coupled between the first conductive structure and the second conductive structure, wherein the conductive pillar comprises a cylindrical structure;
a body extending between the first substrate and the second substrate, wherein the electronic component and the cylindrical structure of the conductive pillar are in the body; and
an underfill between a top side of the first substrate and a bottom side of the electronic component;
wherein the underfill covers a lateral side of a device interconnect on the bottom side of the electronic component and is over a lateral side of the electronic component; and
wherein a top side of the cylindrical structure of the conductive pillar extends into the second dielectric structure of the second substrate.