US 12,444,687 B2
Interconnect structure with vias extending through multiple dielectric layers
Chun-Te Ho, Taipei (TW); Ming-Chung Liang, Hsinchu (TW); Chien-Chih Chiu, Xinying (TW); and Chien-Han Chen, Nantou County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 14, 2022, as Appl. No. 17/671,052.
Application 16/722,365 is a division of application No. 15/664,109, filed on Jul. 31, 2017, granted, now 10,522,468, issued on Dec. 31, 2019.
Application 17/671,052 is a continuation of application No. 16/722,365, filed on Dec. 20, 2019, granted, now 11,251,127.
Prior Publication US 2022/0173042 A1, Jun. 2, 2022
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/5329 (2013.01) [H01L 21/76804 (2013.01); H01L 21/76808 (2013.01); H01L 21/76814 (2013.01); H01L 21/76832 (2013.01); H01L 21/76843 (2013.01); H01L 21/76883 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/53295 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a contact plug over a substrate;
a first conductive feature on the contact plug;
an etch stop layer on the first conductive feature;
a first dielectric layer on the etch stop layer, the first dielectric layer comprising a base dielectric material and a dopant, the base dielectric material having a first dielectric constant, and the dopant is present in the base dielectric material in a concentration to provide that the first dielectric layer has a second dielectric constant greater than the first dielectric constant;
a second dielectric layer on the first dielectric layer, the second dielectric layer comprising the base dielectric material and having the first dielectric constant;
a second conductive feature connected to the first conductive feature, the second conductive feature comprising:
a via portion extending through a first portion of the second dielectric layer and the first dielectric layer, wherein an upper sidewall of the via portion in the second dielectric layer and a lower sidewall of the via portion in the first dielectric layer forms an angle greater than 20°; and
a line portion on the via portion and extending through a second portion of the second dielectric layer.