US 12,444,682 B2
Locally widened profile for nanoscale wiring structure
Oscar van der Straten, Guilderland Center, NY (US); Koichi Motoyama, Clifton Park, NY (US); Scott A. DeVries, Albany, NY (US); and Chih-Chao Yang, Glenmont, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Sep. 29, 2022, as Appl. No. 17/955,803.
Prior Publication US 2024/0113018 A1, Apr. 4, 2024
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5283 (2013.01) [H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/53266 (2013.01)] 19 Claims
OG exemplary drawing
 
15. A wire interconnect structure comprising:
a bottom portion positioned in a bottom dielectric, the bottom portion having a first width and composed of a first metal fill;
a middle portion disposed above the bottom portion and positioned in a middle dielectric, the middle portion having a second width larger than the first width; and
a top portion disposed above the middle portion and positioned in a top dielectric, the top portion having a third width less than the second width;
wherein the middle portion and the top portion are collectively composed of a second metal fill that has a proximate and interfacially resistive connection to the first metal fill; and
wherein the middle dielectric exhibits etch selectivity relative to the bottom dielectric and to the top dielectric.