US 12,444,681 B2
Semiconductor device and method for manufacturing the same
Yasunori Iwashita, Yokkaichi Mie (JP); Shinya Arai, Yokkaichi Mie (JP); Keisuke Nakatsuka, Kobe Hyogo (JP); and Hiroaki Ashidate, Mie Mie (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Sep. 1, 2022, as Appl. No. 17/901,644.
Claims priority of application No. 2022-045836 (JP), filed on Mar. 22, 2022.
Prior Publication US 2023/0307361 A1, Sep. 28, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H10B 41/20 (2023.01); H10B 43/20 (2023.01)
CPC H01L 23/5283 (2013.01) [H01L 23/5226 (2013.01); H01L 24/80 (2013.01); H10B 41/20 (2023.02); H10B 43/20 (2023.02); H01L 2224/8012 (2013.01); H01L 2224/80123 (2013.01); H01L 2224/80129 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device comprising:
forming a first metal pad in each of a plurality of first regions on a first substrate so that warpage is generated on the first substrate;
forming a predetermined pattern in each of a plurality of second regions on a second substrate;
forming a second metal pad in each of the plurality of second regions; and
bonding, after forming the first metal pad and the second metal pad, the first substrate with the second substrate so that the first metal pad is opposed to the second metal pad, wherein
the method further comprising
making a correction, at a time of forming the predetermined pattern in each of the plurality of second regions on the second substrate, (i) to change a position of the predetermined pattern in each of the plurality of second regions in a direction closer to a center of the second substrate along a first direction, and (ii) to change the position of the predetermined pattern in a direction farther from the center of the second substrate along a second direction.