US 12,444,680 B2
Interconnect structures with conductive carbon layers
Mrunal Abhijith Khaderbad, Hsinchu (TW); and Wei-Yen Woon, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 6, 2022, as Appl. No. 17/738,956.
Claims priority of provisional application 63/219,945, filed on Jul. 9, 2021.
Prior Publication US 2023/0010280 A1, Jan. 12, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 23/522 (2006.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H01L 23/5283 (2013.01) [H01L 23/5226 (2013.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/882 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/0149 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a fin structure on a substrate;
forming a source/drain (S/D) region on the fin structure;
forming a contact structure on the S/D region;
forming an oxide layer on the contact structure;
forming a metal via in the oxide layer;
depositing a carbon layer on and in physical contact with top surfaces of the oxide layer and the metal via;
masking a first portion of the carbon layer in physical contact with the metal via to form a conductive carbon line;
converting a second portion of the carbon layer in physical contact with the oxide layer and non-overlapping with the metal via into a first insulating carbon layer;
forming a second insulating carbon layer on the first insulating carbon layer; and
forming a via in the second insulating carbon layer and in physical contact with a top surface of the conductive carbon line.