US 12,444,679 B2
Three-dimensional memory devices having a cylindrical body and plate line contact segments
Yuancheng Yang, Hubei (CN); DongXue Zhao, Hubei (CN); Tao Yang, Hubei (CN); Lei Liu, Hubei (CN); Di Wang, Hubei (CN); Kun Zhang, Hubei (CN); Wenxi Zhou, Hubei (CN); ZhiLiang Xia, Hubei (CN); and ZongLiang Huo, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on May 4, 2022, as Appl. No. 17/736,725.
Application 17/736,725 is a continuation of application No. PCT/CN2022/079162, filed on Mar. 4, 2022.
Prior Publication US 2023/0282576 A1, Sep. 7, 2023
Int. Cl. H01L 23/528 (2006.01); H10B 41/20 (2023.01); H10B 43/20 (2023.01)
CPC H01L 23/5283 (2013.01) [H10B 41/20 (2023.02); H10B 43/20 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory structure, comprising:
a memory cell comprising:
a cylindrical body having a cylindrical shape;
an insulating layer surrounding the cylindrical body;
a word line contact surrounding a first portion of the insulating layer, the word line contact coupled to a word line; and
a plurality of plate line contact segments surrounding a second portion of the insulating layer, the plurality of plate line contact segments coupled to a common plate line;
a bit line contact coupled to the memory cell, the bit line contact coupled to a bit line; and
a source line contact coupled to the memory cell, the source line contact coupled to a source line.