US 12,444,677 B2
Integrated inductor including multi-component via layer inductor element
Yaojian Leng, Vancouver, WA (US)
Assigned to Microchip Technology Incorporated, Chandler, AZ (US)
Filed by Microchip Technology Incorporated, Chandler, AZ (US)
Filed on Apr. 13, 2022, as Appl. No. 17/719,586.
Claims priority of provisional application 63/272,542, filed on Oct. 27, 2021.
Prior Publication US 2023/0128990 A1, Apr. 27, 2023
Int. Cl. H01L 23/522 (2006.01); H01F 17/00 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10D 1/20 (2025.01)
CPC H01L 23/5227 (2013.01) [H01F 17/0013 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/53223 (2013.01); H10D 1/20 (2025.01); H01F 2017/002 (2013.01); H01F 2017/0073 (2013.01); H01F 2017/0086 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
an integrated circuit (IC) structure including multiple metal interconnect layers and multiple via layers formed in an alternating manner in a vertical direction, with respective via layers located between a respective pair of the metal interconnect layers;
an integrated inductor comprising an inductor wire, wherein at least a portion of the inductor wire is defined by an inductor element stack including:
a metal layer inductor element formed in a respective metal interconnect layer in the IC structure; and
a multi-component via layer inductor element formed in a respective via layer in the IC structure vertically adjacent the respective metal interconnect layer, the multi-component via layer inductor element conductively connected to the metal layer inductor element;
the multi-component via layer inductor element comprising:
a via layer inductor element cup-shaped component formed from a first metal;
a via layer inductor element fill component formed from a second metal different than the first metal, the via layer inductor element fill component formed in an opening defined by the via layer inductor element cup-shaped component;
a metal interconnect structure including:
a metal layer interconnect element formed in the respective metal interconnect layer; and
an interconnect via formed in the respective via layer and conductively coupled to the metal layer interconnect element, the interconnect via formed from the first metal and free of the second metal.