US 12,444,668 B2
Semiconductor device
Toru Sugiyama, Tokyo (JP); Akira Yoshioka, Yokohama Kanagawa (JP); Hitoshi Kobayashi, Yamato Kanagawa (JP); Hung Hung, Kawasaki Kanagawa (JP); Yasuhiro Isobe, Tokyo (JP); Hideki Sekiguchi, Yokohama Kanagawa (JP); Tetsuya Ohno, Yokohama Kanagawa (JP); and Masaaki Onomura, Tokyo (JP)
Assigned to Kabushiki Kaisha Toshiba, Kawasaki (JP); and Toshiba Electronic Devices & Storage Corporation, Kawasaki (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Mar. 9, 2023, as Appl. No. 18/181,084.
Claims priority of application No. 2022-151306 (JP), filed on Sep. 22, 2022.
Prior Publication US 2024/0105563 A1, Mar. 28, 2024
Int. Cl. H01L 23/495 (2006.01); H01L 25/16 (2023.01); H10D 30/47 (2025.01)
CPC H01L 23/49575 (2013.01) [H01L 23/49503 (2013.01); H01L 23/4952 (2013.01); H01L 23/49562 (2013.01); H01L 25/16 (2013.01); H10D 30/471 (2025.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first mounting bed that is conductive;
a second mounting bed that is conductive;
a third mounting bed that is conductive;
a nitride semiconductor element including
a semiconductor substrate formed on the first mounting bed,
a first nitride semiconductor layer formed on the semiconductor substrate,
a second nitride semiconductor layer located on the first nitride semiconductor layer,
a first source/drain electrode located on the first nitride semiconductor layer,
a second source/drain electrode located on the first nitride semiconductor layer and separated from the major source/drain electrode,
a first gate electrode located between the first source/drain electrode and the second source/drain electrode on the second nitride semiconductor layer, and
a second gate electrode located between the first gate electrode and the second source/drain electrode on the second nitride semiconductor layer;
a first diode laterally adjacent the nitride semiconductor element on the first mounting bed, the first diode including
a first anode electrode electrically connected to the semiconductor substrate through the first mounting bed, and
a first cathode electrode electrically connected to the first source/drain electrode through the second mounting bed; and
a second diode laterally adjacent the nitride semiconductor element on the first mounting bed, the second diode including
a second anode electrode electrically connected to the semiconductor substrate through the first mounting bed, and
a second cathode electrode electrically connected to the second source/drain electrode through the second mounting bed.