US 12,444,667 B2
Semiconductor device and method for manufacturing semiconductor device
Susumu Fukui, Yamagata (JP); Takaki Takahashi, Yamagata (JP); Kanako Deguchi, Kyoto (JP); and Kentaro Nasu, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP); and ASE JAPAN CO., LTD., Yamagata (JP)
Appl. No. 17/425,212
Filed by ASE JAPAN CO., LTD., Yamagata (JP); and ROHM CO., LTD., Kyoto (JP)
PCT Filed Feb. 7, 2020, PCT No. PCT/JP2020/004860
§ 371(c)(1), (2) Date Jul. 22, 2021,
PCT Pub. No. WO2020/166512, PCT Pub. Date Aug. 20, 2020.
Claims priority of application No. 2019-025016 (JP), filed on Feb. 15, 2019.
Prior Publication US 2022/0084912 A1, Mar. 17, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/492 (2006.01)
CPC H01L 23/49575 (2013.01) [H01L 21/4842 (2013.01); H01L 21/561 (2013.01); H01L 23/4951 (2013.01); H01L 23/49541 (2013.01); H01L 23/49548 (2013.01); H01L 23/49562 (2013.01); H01L 23/49582 (2013.01); H01L 23/3107 (2013.01); H01L 23/3114 (2013.01); H01L 23/3121 (2013.01); H01L 23/492 (2013.01); H01L 23/49579 (2013.01); H01L 24/48 (2013.01); H01L 2224/48175 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first lead having a first obverse surface, a first reverse surface facing opposite from the first obverse surface in a thickness direction, and a first end surface that is perpendicular to the first obverse surface and the first reverse surface and is connected to the first obverse surface, the first lead being formed with a first recess and a second recess that are each recessed from the first reverse surface toward the first obverse surface;
a second lead spaced apart from the first lead and having a second obverse surface and a second reverse surface facing opposite from each other in the thickness direction, and a second end surface that is perpendicular to the second obverse surface and the second reverse surface and is connected to the second obverse surface;
a semiconductor element mounted on the first obverse surface;
a sealing resin covering the semiconductor element and having a resin side surface extending along the thickness direction;
a first plating layer formed in contact with the first reverse surface and continuously covering an inner surface of the second recess; and
a second plating layer,
wherein the first recess is exposed from the sealing resin and is connected to the first reverse surface and the first end surface,
the first plating layer includes a first portion covering the first reverse surface,
the second plating layer is formed in contact with the first recess and the first portion,
the second plating layer on the first recess includes a first part extending along the thickness direction and a second part extending along a direction perpendicular to the thickness direction,
the first end surface is aligned with the resin side surface,
the first reverse surface, the second reverse surface, the first end surface, and the second end surface are exposed from the sealing resin, and
the first plating layer is not formed on the first obverse surface.