US 12,444,665 B2
Semiconductor device
Chen-Hua Yu, Hsinchu (TW); Chun-Hui Yu, Hsinchu County (TW); Jeng-Nan Hung, Taichung (TW); Kuo-Chung Yee, Taoyuan (TW); and Po-Fan Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 15, 2023, as Appl. No. 18/510,599.
Application 18/510,599 is a continuation of application No. 18/155,067, filed on Jan. 17, 2023, granted, now 11,854,936.
Application 18/155,067 is a continuation of application No. 16/916,115, filed on Jun. 30, 2020, granted, now 11,574,853, issued on Feb. 7, 2023.
Prior Publication US 2024/0087986 A1, Mar. 14, 2024
Int. Cl. H01L 23/46 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/433 (2006.01)
CPC H01L 23/46 (2013.01) [H01L 23/3157 (2013.01); H01L 23/367 (2013.01); H01L 23/433 (2013.01); H01L 24/29 (2013.01); H01L 2224/29018 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a semiconductor package disposed on the substrate;
a lid disposed on the substrate to isolate the semiconductor package from coolant;
a backside metal layer disposed between the lid and the semiconductor package; and
a thermal conductive bonding layer disposed between the lid and the backside metal layer.