US 12,444,649 B2
Vias for cobalt-based interconnects and methods of fabrication thereof
Yu-Jen Chang, Hsinchu (TW); Hua Feng Chen, Hsinchu (TW); Kuo-Hua Pan, Hsinchu (TW); and Min-Yann Hsieh, Kaohsiung (TW)
Assigned to Parabellum Strategic Opportunties Fund LLC, Austin, TX (US)
Filed by Parabellum Strategic Opportunities Fund LLC, Wilmington, DE (US)
Filed on Feb. 19, 2024, as Appl. No. 18/444,959.
Application 18/444,959 is a continuation of application No. 17/815,839, filed on Jul. 28, 2022, granted, now 11,908,735.
Application 17/815,839 is a continuation of application No. 16/720,853, filed on Dec. 19, 2019, granted, now 11,404,309, issued on Aug. 2, 2022.
Application 16/720,853 is a continuation of application No. 15/692,212, filed on Aug. 31, 2017, granted, now 10,553,481, issued on Feb. 4, 2020.
Prior Publication US 2024/0194525 A1, Jun. 13, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76846 (2013.01) [H01L 21/76873 (2013.01); H01L 21/76886 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53266 (2013.01); H01L 21/76813 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 21/76882 (2013.01); H01L 23/485 (2013.01); H01L 23/532 (2013.01); H01L 23/53295 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for forming an interconnect structure, the method comprising:
forming a cobalt-containing contact directly on a first source/drain feature, wherein the cobalt-containing contact includes a cobalt-containing bulk layer, the cobalt-containing contact has an upper portion above a top surface of a gate structure, the cobalt-containing contact has a lower portion below the top surface of the gate structure, the upper portion is formed in a first interlayer dielectric layer and a first contact etch stop layer, and the gate structure is disposed between the first source/drain feature and a second source/drain feature;
forming a tungsten-containing via directly on the cobalt-containing contact, wherein the tungsten-containing via is formed in a second interlayer dielectric layer and a second contact etch stop layer, wherein the forming the tungsten-containing via includes:
forming a tungsten-containing bulk layer, and
forming a titanium-and-nitrogen-containing barrier layer along a bottom and a sidewall of the tungsten-containing bulk layer; and
forming a copper-containing trace directly on the tungsten-containing via, wherein the copper-containing trace is formed in a third interlayer dielectric layer and a third contact etch stop layer;
wherein the gate structure is a first gate structure and the lower portion of the cobalt-containing contact and the first source/drain feature are disposed between the first gate structure and a second gate structure.