US 12,444,648 B2
Conformal titanium silicon nitride-based thin films and methods of forming same
Ajit Dhamdhere, San Jose, CA (US); Hae Young Kim, San Jose, CA (US); Hyunchol Cho, Milpitas, CA (US); and Bunsen B. Nie, Fremont, CA (US)
Assigned to Eugenus, Inc., San Jose, CA (US)
Filed by Eugenus, Inc., San Jose, CA (US)
Filed on Apr. 6, 2022, as Appl. No. 17/714,973.
Application 17/714,973 is a continuation in part of application No. 16/595,916, filed on Oct. 8, 2019, granted, now 11,361,992.
Claims priority of provisional application 63/172,002, filed on Apr. 7, 2021.
Claims priority of provisional application 63/171,970, filed on Apr. 7, 2021.
Prior Publication US 2022/0301929 A1, Sep. 22, 2022
Int. Cl. H01L 21/768 (2006.01)
CPC H01L 21/76843 (2013.01) [H01L 21/76861 (2013.01); H01L 21/76877 (2013.01)] 33 Claims
OG exemplary drawing
 
1. A method of forming a diffusion barrier, the method comprising:
forming the diffusion barrier comprising TiSiN by exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases, the diffusion barrier having one or more of:
a modulus exceeding 290 GPa and a Si content exceeding 2.7 atomic %,
a hardness exceeding 20 GPa and a Si content exceeding 2.7 atomic %,
a crystalline texture such that a grazing incidence X-ray diffraction spectrum of the diffusion barrier exhibits a ratio of an area of under a (002) peak and a sum of areas under (111) and (222) peaks exceeding 0.4 and a Si content exceeding 2.7 atomic %, or
a nanocrystalline structure having an average grain size that is less than about 6.5 nm and a Si content exceeding 2.7%,
wherein exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor, and
wherein exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor, followed by a silicon (Si) precursor, followed by the N precursor.