| CPC H01L 21/6836 (2013.01) [C09J 133/10 (2013.01); H01L 21/3043 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68386 (2013.01)] | 7 Claims |

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1. A method for manufacturing an electronic device, the method at least comprising:
a step (A) of preparing a structure which includes a wafer including a circuit forming surface, and an adhesive film bonded to the circuit forming surface side of the wafer;
a step (B) of back-grinding a surface of the wafer on a side opposite to the circuit forming surface side; and
a step (C) of removing the adhesive film from the wafer after the adhesive film is irradiated with an ultraviolet ray,
wherein the adhesive film includes a base material layer, and an adhesive resin layer configured with an ultraviolet curable adhesive resin material, provided on one surface side of the base material layer, and
regarding the ultraviolet curable adhesive resin material, when a storage elastic modulus at 5° C. is defined as E′ (5° C.) and a storage elastic modulus at 100° C. is defined as E′ (100° C.) in a case where a viscoelastic characteristic is measured by the following procedures (i) and (ii), E′ (5° C.) is 2.0×106 to 2.0×109 Pa, and E′ (100° C.) is 1.0×106 to 3.0×107 Pa,
[Procedure]
(i) a film having a film thickness of 0.2 mm is formed using the ultraviolet curable adhesive resin material, the film is irradiated with an ultraviolet ray having a main wavelength of 365 nm at an irradiation intensity of 100 mW/cm2 with an ultraviolet ray amount of 1,080 mJ/cm2 using a high-pressure mercury lamp in an environment at 25° C. for ultraviolet curing, and a cured film is obtained,
(ii) a dynamic viscoelasticity of the cured film is measured at a frequency of 1 Hz and a temperature of −50° C. to 200° C. in a tensile mode.
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