US 12,444,626 B2
Temperature control device for semiconductor wafer and temperature control method for semiconductor wafer
Wataru Omuro, Hiratsuka (JP); Atsushi Kobayashi, Hiratsuka (JP); Takashi Motoyama, Hachioji (JP); and Takenori Takahashi, Hachioji (JP)
Assigned to KELK Ltd., Hiratsuka (JP); and TOKYO SEIMITSU CO., LTD., Hachioji (JP)
Filed by KELK Ltd., Hiratsuka (JP); and TOKYO SEIMITSU CO., LTD., Hachioji (JP)
Filed on Feb. 2, 2022, as Appl. No. 17/590,857.
Claims priority of application No. 2021-023417 (JP), filed on Feb. 17, 2021.
Prior Publication US 2022/0262660 A1, Aug. 18, 2022
Int. Cl. H01L 21/20 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/67248 (2013.01) [H01L 22/20 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A temperature control device for a semiconductor wafer, comprising:
a placement part having a placement surface on which a semiconductor wafer is placed and having a plurality of regions into which the placement surface is partitioned in a plan view;
a temperature adjustment part configured to independently adjust a temperature of the placement part for each of the plurality of regions;
a plurality of temperature detection parts provided in at least one of the plurality of regions and configured to detect a temperature of the region of which the temperature has been adjusted by the temperature adjustment part; and
a control part configured to monitor detection temperatures of the plurality of temperature detection parts, to select one having a large temperature change per unit time among the plurality of monitored detection temperatures, and to control the temperature adjustment part based on the selected detection temperature, wherein a plurality of the temperature detection parts are provided in each of the plurality of regions, and
the control part controls the temperature adjustment part in one of two regions adjacent to each other in a plan view among the plurality of regions and controls the temperature adjustment part in the other one of the two regions based on the selected detection temperature.