US 12,444,620 B2
Semiconductor device and method of forming SiP module absent substrate
JiEun Kwon, Incheon (KR); JiSik Moon, Incheon (KR); KiCheol Lee, Incheon (KR); and BoLee Lim, Incheon (KR)
Assigned to STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed by STATS ChipPAC Pte. Ltd., Singapore (SG)
Filed on May 2, 2022, as Appl. No. 17/661,747.
Prior Publication US 2023/0352316 A1, Nov. 2, 2023
Int. Cl. H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 21/561 (2013.01) [H01L 21/568 (2013.01); H01L 23/3107 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/96 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01)] 28 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, comprising:
providing a sacrificial substrate including a bump stop layer;
disposing an electrical component over the sacrificial substrate with a bump of the electrical component penetrating the sacrificial substrate and stopping the penetration by contacting the bump stop layer;
depositing an encapsulant over the electrical component and sacrificial substrate; and
removing the sacrificial substrate to leave the bump of the electrical component extending out from the encapsulant.