US 12,444,619 B2
Physical vapor deposition seeding for high aspect ratio vias in glass core technology
Veronica Strong, Hillsboro, OR (US); Aleksandar Aleksov, Chandler, AZ (US); Georgios C. Dogiamis, Chandler, AZ (US); Telesphor Kamgaing, Chandler, AZ (US); and Neelam Prabhu Gaunkar, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jun. 16, 2021, as Appl. No. 17/349,667.
Prior Publication US 2022/0406616 A1, Dec. 22, 2022
Int. Cl. H01L 21/48 (2006.01); H01L 23/498 (2006.01)
CPC H01L 21/486 (2013.01) [H01L 23/49827 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A package substrate, comprising:
a core with a first surface and a second surface opposite from the first surface, wherein the core comprises a single material continuous from the first surface to the second surface;
a via hole through the single material of the core, wherein the via hole comprises:
a first portion;
a second portion;
a perforated ledge between the first portion and the second portion; and
an adhesion layer in the via hole, wherein the adhesion layer covers the entire first portion of the via hole and a surface of the perforated ledge facing the first portion of the via hole, and wherein the adhesion layer covers a part of the second portion of the via hole; and
a via filling the via hole.