US 12,444,618 B2
Etching method and etching apparatus
Thi-Thuy-Nga Nguyen, Aichi (JP); Kenji Ishikawa, Aichi (JP); Masaru Hori, Aichi (JP); Kazunori Shinoda, Tokyo (JP); and Hirotaka Hamamura, Tokyo (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Appl. No. 17/909,006
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Oct. 21, 2021, PCT No. PCT/JP2021/038955
§ 371(c)(1), (2) Date Sep. 2, 2022,
PCT Pub. No. WO2023/067767, PCT Pub. Date Apr. 27, 2023.
Prior Publication US 2024/0222138 A1, Jul. 4, 2024
Int. Cl. H01L 21/3213 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/32136 (2013.01) [H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 2237/3341 (2013.01)] 9 Claims
OG exemplary drawing
 
1. An etching method for etching a metal carbide film, comprising:
a process of supplying non-halogen reactive species, which include NH and H, to a base material that includes a metal carbide film on at least a part of a surface with a metal nitride film; and
a selective etching process of the metal carbide to the metal nitride by forming volatile products in the process.