US 12,444,616 B2
Polishing composition for semiconductor processing polishing composition preparation method, and semiconductor device manufacturing method to which polishing composition is applied
Han Teo Park, Seoul (KR); Deok Su Han, Seoul (KR); Jang Kuk Kwon, Seoul (KR); and Seung Chul Hong, Seoul (KR)
Assigned to SK enpulse Co., Ltd., Gyeonggi-do (KR)
Appl. No. 18/255,783
Filed by SK enpulse Co., Ltd., Gyeonggi-do (KR)
PCT Filed Oct. 18, 2021, PCT No. PCT/KR2021/014483
§ 371(c)(1), (2) Date Jun. 2, 2023,
PCT Pub. No. WO2022/145653, PCT Pub. Date Jul. 7, 2022.
Claims priority of application No. 10-2020-0187468 (KR), filed on Dec. 30, 2020; and application No. 10-2021-0138360 (KR), filed on Oct. 18, 2021.
Prior Publication US 2024/0030041 A1, Jan. 25, 2024
Int. Cl. H01L 21/321 (2006.01); C09G 1/02 (2006.01); H01L 21/304 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/3212 (2013.01) [C09G 1/02 (2013.01); H01L 21/304 (2013.01); H01L 21/67219 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A polishing composition for a semiconductor process, comprising:
abrasive particles;
an accelerator; and
a stabilizer,
wherein the abrasive particles have an average diameter of 70 nm to 120 nm,
wherein the polishing composition has a removal rate of an amorphous carbon layer of 110 Å/min to 250 Å/min,
wherein the removal rate of an amorphous carbon layer is determined under the following measurement conditions: an amorphous carbon layer (ACL) having a thickness of 2000 Å, a polishing time of 60 seconds, an applied pressure of 2 psi, a carrier speed of 87 rpm, a platen speed of 93 rpm, and a polishing composition flow rate of 200 mL/min,
wherein the polishing composition has a cohesion index (CI) of 0.5 to 5 as calculated by Equation 1 below:

OG Complex Work Unit Math
wherein
Sai is an average particle diameter of the abrasive particles contained in the polishing composition for a semiconductor process, measured by a dynamic light scattering particle size analyzer, and
Saf is an average particle diameter of the abrasive particles contained in the polishing composition for a semiconductor process, measured by the dynamic light scattering particle size analyzer after keeping the polishing composition at 60° C. for 17 hours and then cooling the polishing composition at 15 to 25° C.