US 12,444,615 B2
Forming a doped hardmask
Scott Falk, Essex, MA (US); Rajesh Prasad, Lexington, MA (US); Sarah Michelle Bobek, Sunnyvale, CA (US); Harry Whitesell, Sunnyvale, CA (US); Kurt Decker-Lucke, Santa Clara, CA (US); Kyu-Ha Shim, Santa Clara, CA (US); Adaeze Osonkie, Beverly, MA (US); and Tomohiko Kitajima, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 13, 2022, as Appl. No. 17/965,727.
Claims priority of provisional application 63/368,678, filed on Jul. 18, 2022.
Prior Publication US 2024/0021433 A1, Jan. 18, 2024
Int. Cl. H01L 21/3115 (2006.01); C23C 16/26 (2006.01); C23C 16/56 (2006.01); H01L 21/033 (2006.01); H01L 21/266 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/31155 (2013.01) [C23C 16/26 (2013.01); C23C 16/56 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/266 (2013.01); H01L 21/3086 (2013.01); H01L 21/31105 (2013.01); H01L 21/31116 (2013.01); H01L 21/02115 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of forming a doped amorphous carbon hardmask, comprising:
depositing an amorphous carbon hardmask on an underlayer positioned on a substrate;
performing two or more ion implant processes to dope the amorphous carbon hardmask with a dopant to form the doped amorphous carbon hardmask, wherein at least two of the ion implant processes comprises at least a first ion implant process and a second ion implant process that are performed at different tilt angles and at a common implant energy level, the tilt angles defined between an axis extending in a normal direction from a top surface of a platen and a direction of an ion beam developed by the ion implant processes, the first ion implant process implanting dopants to a depth greater that that of the second ion implant process;
patterning the doped amorphous carbon hardmask with a photoresist; and
etching the underlayer through the doped amorphous carbon hardmask.