US 12,444,611 B2
Semiconductor process polishing composition and polishing method of substrate applied with polishing composition
Seung Chul Hong, Suwon-si (KR); Deok Su Han, Suwon-si (KR); Hwan Chul Kim, Suwon-si (KR); Han Teo Park, Suwon-si (KR); and Hyeong Ju Lee, Suwon-si (KR)
Assigned to SK enpulse Co., Ltd., Pyeongtaek-si (KR)
Filed by SK enpulse Co., Ltd., Pyeongtaek-si (KR)
Filed on Dec. 28, 2021, as Appl. No. 17/563,499.
Claims priority of application No. 10-2020-0185626 (KR), filed on Dec. 29, 2020.
Prior Publication US 2022/0208552 A1, Jun. 30, 2022
Int. Cl. C11D 3/30 (2006.01); C09G 1/00 (2006.01); C09G 1/02 (2006.01); C09G 1/14 (2006.01); C11D 3/37 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/31053 (2013.01) [C09G 1/02 (2013.01); H01L 21/76819 (2013.01)] 13 Claims
 
1. A polishing composition for a semiconductor process, the polishing composition comprising:
metal oxide particles which have a surface that exposes functional groups as polishing particles,
wherein the surface comprises a first functional group comprising an epoxy group at an end and a second functional group comprising an amine group at an end, and
wherein the first functional group and the second functional group are present in a mole ratio of 1:1.2 to 1:15 (first:second).